Overview:
3DFeM is one of the 41 active Energy Frontier Research Center (EFRC) program funded by U.S. Department of Energy’s (DOE) office of Basic Energy Science (BES). 3DFeM will enable technologies exploiting the 3rd dimension in microelectronics for functions beyond interconnects for low power, non volatile 3D memory above CMOS logic. The 3DFeM vision leverages fundamental understanding of emergent ferroelectricity created via nanoscale inhomogeneities to create memory devices densely interconnected with logic to enable low-power, 3D non-von Neumann computation. Our research focuses on developing sophisticated models to accurately capture the intricate behavior of ferroelectric devices (FeFETs, FTJs, and FeRAMs) and harnessing their unique properties for circuit and system-level applications. We serve as a critical bridge between the high-level aspirations of various applications and the innovative materials and devices pioneered by our fellow researchers at the 3DFEM center. The Center embodies the power of collaboration, bringing together ten leading institutions and twenty-one esteemed principal investigators, with Dr. Vijay proudly serving as Associate Director
